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NVIDIA Reportedly Plans GPU-Direct Storage for Vera Rubin, Raising Expectations for HBF Beyond HBM

　　As AI models continue to scale, HBM may struggle to meet future memory-capacity demands, prompting industry experts to view GPU-driven storage architectures as a potential next frontier. According to The Elec, NVIDIA and Amazon are reportedly advancing storage architectures that allow GPUs to directly control storage devices such as SSDs. NVIDIA is said to plan the introduction of GPU-Initiated Direct Storage Access (GIDS) starting with its Vera Rubin AI platform, a shift that could accelerate the emergence of high-bandwidth flash (HBF), the report notes.　　Citing Song Ki-hwan, a professor in the Department of System Semiconductor Engineering at Yonsei University, the report explains that GIDS goes beyond existing GPU Direct Storage (GDS) architecture. Under GDS, CPUs issue data requests to storage devices before data is transferred to GPUs. GIDS advances this by allowing GPUs to access storage directly, bypassing CPUs and DRAM.　　Both GIDS and GDS aim to overcome data-transfer bottlenecks tied to traditional von Neumann computing architectures. Microsoft and AMD are also said to be exploring similar approaches. The report, citing Song, adds that traditional data-transfer methods are inefficient because CPUs are structurally limited in thread processing, while GPUs can generate tens of thousands of parallel threads. Song also notes that GPU-HBM data transfer already accounts for roughly half of total system power, strengthening the case for HBF architectures that place ultra-fast NAND closer to GPUs to address future AI bottlenecks.　　GIDS Could Accelerate HBF and Expand NAND’s Role in AI Memory　　The emergence of GIDS could allow NAND storage to take on a larger role in AI memory systems while easing pressure on HBM capacity. As the report notes, this shift would require higher-performance NAND flash capable of keeping pace with GPU processing speeds. One proposed approach is high-bandwidth flash (HBF), which stacks NAND flash vertically in a structure similar to HBM and connects it using through-silicon vias (TSVs).　　The report notes that NAND flash offers roughly 30 times higher bit density than DRAM, enabling far greater memory capacity in a similar footprint. According to Song, combining six HBF units with two HBM units could increase GPU memory capacity more than 16 times, from 192GB to 3,120GB, potentially supporting AI models with parameter sizes around 16 times larger than current architectures.　　Still, NAND flash has endurance limits, typically supporting only around 100,000 write-and-erase cycles versus DRAM’s near-unlimited write capability. As a result, HBF is seen as better suited for storing AI model parameters, which remain largely unchanged during inference and function as read-only workloads.　　Meanwhile, memory makers have also been exploring GPU-driven memory architectures. According to an Edaily report last year, sources said Samsung Electronics is actively researching next-generation high-performance Z-NAND. The company is also developing GIDS technology that would allow GPUs to directly access Z-NAND-based storage devices. If implemented, GPUs would be able to access Z-NAND devices without intermediaries, potentially shortening processing times for AI workloads.

Key word：

NVIDIA

Release time：2026-05-20 11:20 reading：450 Continue reading>>

Trade news

YC Chem Reportedly First to Supply Glass Substrate Photoresists; Customer Eyes Year-End Mass Production

　　South Korea’s YC Chem has reportedly become the first in the industry to supply photoresists for glass substrates. According to The Elec, sources say the company is supplying i-line photoresist, stripper, and developer materials for glass substrates to a customer after receiving a purchase order (PO) following qualification tests.　　As supply of related materials begins to ramp up, commercialization of glass substrates also appears to be drawing closer, the report notes. Current shipments are intended for the customer’s prototype production, with material supply volumes expected to increase gradually as the customer moves toward mass production from the end of this year.　　The company is also seeking additional customers. According to the report, it is currently in discussions with more than three companies regarding the supply of glass substrate materials. With some firms, sample testing is underway for negative photoresists and glass substrate coating materials.　　YC Chem has also supplied prototype coating materials for glass substrates to customers. These materials are intended to minimize cracking and warpage caused by differences in thermal expansion coefficients (CTE) and thermal conductivity between glass and copper. According to the report, the products are currently undergoing qualification testing.　　The report notes that the coating materials are used in embedding-type glass substrates, which integrate circuits and passive components directly within the glass substrate itself.　　Key Requirements for Photoresists in Glass Substrate Manufacturing　　As the report points out, the glass substrate photoresist supplied by YC Chem is based on i-line technology, which uses a 365-nanometer (nm) mercury lamp wavelength in the lithography process. Notably, the report points out that, unlike extreme ultraviolet (EUV) photoresists used in advanced semiconductor manufacturing, glass substrate production places greater emphasis on thicker film thickness and strong etch resistance.　　In particular, the report states that through-glass via (TGV) processes require strong chemical durability and high etch resistance during hole formation and copper plating. As a result, demand is increasing for longer-wavelength lithography materials such as i-line and krypton fluoride (KrF)-based photoresists.　　In South Korea, Samyang NC Chem is also developing photoresist materials for glass substrates. The report adds that the company has supplied samples to more than two customers and is reportedly aiming for mass production next year.　　As major companies accelerate glass substrate development, securing stable material supplies is becoming increasingly important. A January Chosun Biz report said Absolics is diversifying suppliers by adding a domestic partner for glass substrate photoresists, reducing reliance on Japan’s TOK, while also reviewing process dualization for TGV and plating processes through additional collaborators.

Key word：

YC Chem

Release time：2026-05-18 13:05 reading：411 Continue reading>>

Trade news

ARM CEO Says Agentic AI May Drive CPU Core Counts to 512 as GPU-CPU Ratios Become Less Relevant

　　The rise of agentic AI is fueling fresh debate over the future GPU-to-CPU balance in AI systems, with Arm CEO Rene Haas now weighing in on the discussion. According to a transcript published by Investing.com, Haas said that while CPUs may not outnumber GPUs on a chip basis, they could from a core-count perspective.　　Haas noted that overall CPU demand is likely to increase significantly as agentic AI scales, with data centers potentially requiring more than four times today’s CPU capacity. He said this could create a data center CPU market opportunity exceeding US$100 billion by 2030.　　At the same time, Haas emphasized that the industry is seeing not only an explosion in overall CPU demand, but also rapid growth in the number of cores per CPU. According to Haas, many agentic AI workloads involve independent jobs, flows, or batches running on dedicated CPU cores, increasing the need for higher-core-count processors.　　Haas used Blackwell, Rubin, and other large AI accelerators as examples, noting that these chips are already approaching reticle limits, meaning their size is constrained by the maximum area a lithography mask can print. In contrast, he said CPU core counts could still double or even quadruple over the coming years.　　Haas noted that the Arm AGI CPU already features 136 cores, significantly higher than many competing offerings. Looking ahead, he said the industry is likely to move toward 256-core and even 512-core CPU designs. He added that such high-core-count architectures play to Arm’s strengths, as efficiency per core becomes increasingly critical at larger scales.　　Mydrivers notes that AMD and Intel are moving in a similar direction. AMD’s 2nm Zen 6-based EPYC processors are already expected to reach up to 256 cores with SMT multithreading support, while Intel’s all-E-core Xeon processors have reached 288 cores, with the next generation expected to scale to as many as 512 cores.　　Regarding the Arm AGI CPU launched at the company’s Arm Everywhere event last quarter, Haas said customer response has been “very strong.” He added that customer demand across fiscal 2027 and fiscal 2028 has already exceeded US$2 billion, more than double the level projected at launch.

Key word：

ARM

Release time：2026-05-11 13:48 reading：440 Continue reading>>

Trade news

Apple Reportedly Keeps 2nm 5G Modem Orders with TSMC Amid Intel Cooperation Signals

　　While recent market chatter has focused on a potential shift by Apple between longtime foundry partner TSMC and Intel, the Economic Daily News, citing industry sources, reports that the Cupertino-based company remains heavily dependent on the Taiwanese foundry giant, as it plans to place its entire in-house 5G modem orders with TSMC, leveraging its 2nm process technology.　　The report suggests that Apple’s self-developed 5G modem chips are expected to power future iPhone, iPad, and Apple Watch devices, replacing modems from Qualcomm. The volume used across its product lineup is projected to reach hundreds of millions of units, the report adds.　　Notably, Apple’s iPhone 17 lineup is expected to be the last to ship with Qualcomm Incorporated’s 5G modems, as the company moves toward a full transition to its in-house C2 baseband chip across all iPhone 18 models, according to Wccftech.　　The C2 development builds on Apple’s earlier in-house modem effort. Apple’s C1, first introduced in early 2025 with the iPhone 16e, marked its most complex chip system to date, integrating a 4nm baseband modem and a 7nm transceiver, according to earlier reporting from Reuters. The Economic Daily News further reports that Apple Inc.’s in-house C2 5G modem is expected to add full mmWave support—addressing the Sub-6 GHz limitation of its predecessor—while also incorporating satellite connectivity.　　Supply chain sources cited in the Economic Daily News report say TSMC has already secured foundry orders for Apple’s modem chips. Its back-end testing partner is also reportedly preparing for higher demand, with around 600 test systems being procured, as capacity is set to ramp from 2027.　　Apple’s Chip Tug-of-War: TSMC vs Intel　　Though claims of an Apple order shift to Intel remain unconfirmed, and any such move would not signal a departure from TSMC, cooperation between Apple and Intel appears to be warming. According to The Wall Street Journal, the two companies have reportedly reached a preliminary agreement for Intel to manufacture some of the chips powering Apple devices.　　The two sides have been engaged in intensive talks for more than a year, with a formal deal said to have been hammered out in recent months, the report adds.　　In parallel, Commercial Times reported earlier that Apple is evaluating Intel’s 18A-P process for its M-series chips. Looking further ahead, The New 7 reports that the first Intel-manufactured low-end M-series chips could emerge as early as mid-2027 under contract production, likely targeting entry-level Macs or iPads.　　As highlighted by The Wall Street Journal, Apple’s reported outreach to Intel may reflect growing supply chain pressures, as the Cupertino firm—long TSMC’s top customer—faces tightening access to advanced manufacturing capacity amid surging demand from NVIDIA and other AI chip designers.　　Intel previously played a central role in powering Apple’s Mac lineup, before Apple transitioned in 2020 to its own Arm-based custom chips, the report points out.

Key word：

Apple

Release time：2026-05-11 11:12 reading：456 Continue reading>>

Trade news

TSMC, Sony to Form JV for Image Sensors, Including New Production Lines for AI and Automotive Use

　　As TSMC has decided to upgrade its 2nd Kumamoto fab to 3nm, the foundry giant is also exploring to secure more opportunities for its mature nodes in Japan. According to its press release on May 8, Sony and TSMC announced the signing of a non-binding memorandum of understanding (MOU) to establish a strategic partnership focused on the development and manufacturing of next-generation image sensors.　　Notably, under the proposed framework, the two companies plan to form a joint venture (JV), with Sony serving as the majority and controlling shareholder. The JV is expected to build development and production lines at Sony’s newly constructed fab in Koshi City, Kumamoto Prefecture.　　TSMC said that beyond manufacturing expansion, the partnership is also aimed at exploring emerging opportunities in physical AI applications, including automotive and robotics.　　Through this collaboration, Sony will contribute its deep expertise in image sensor design, while TSMC will bring its advanced process technology and large-scale manufacturing capabilities. Both sides aim to combine their respective strengths to further enhance the performance and competitiveness of future image sensor technologies.　　The move aligns with an April Reuters report, which noted that Japan’s Ministry of Economy, Trade and Industry (METI) has confirmed that the Japanese government will provide subsidies of up to ¥60 billion (approximately US$380 million) to Sony Semiconductor Solutions Corporation for the construction of an image sensor facility in Kumamoto Prefecture, western Japan.　　Sony is a long-time customer of TSMC. As previously reported by Commercial Times, TSMC’s first Kumamoto fab—entering mass production in late 2024—supplies logic chips to Sony and DENSO, using 22/28nm and 12/16nm process technologies.　　Separately, Sony has recently begun restructuring efforts, including a spin-off of its television business. Its CIS (image sensor) unit is also facing rising competitive pressure, as Samsung Electronics continues to expand its share in supplying image sensors for Apple, prompting Sony to seek new growth momentum in the segment, Commercial Times added.

Key word：

TSMC

Release time：2026-05-09 10:16 reading：686 Continue reading>>

Trade news

TSMC Hints at Potential Further U.S. Expansion; Industry Sources Reportedly See Up to US$250B Investment

　　As TSMC continues expanding its U.S. footprint, comments from Cliff Hou, TSMC Senior Vice President and Deputy Co-COO, have caught industry attention. According to Commercial Times, Hou said at the 2026 SelectUSA Investment Summit that the company “is prepared for growth from any new business opportunities,” remarks the market has interpreted as signaling potential further expansion of TSMC’s U.S. investments. TSMC’s total U.S. investment currently stands at US$165 billion.　　Commercial Times notes that supply chain developments show chip equipment suppliers have also begun establishing U.S. subsidiaries to support TSMC. Industry sources added that TSMC’s total U.S. investment could reach as much as US$250 billion, with the company expected to replicate the Hsinchu Science Park cluster model in Phoenix.　　Meanwhile, Economic Daily News reported that TSMC’s first Arizona fab entered mass production in 4Q24, while its second fab has already been completed and is expected to begin 3nm mass production in the second half of 2027. TSMC previously said construction of its third Arizona fab is already underway, while permits are being sought for a fourth fab and its first advanced packaging facility in the state. The report also noted that TSMC has acquired a second large parcel of land near its existing Arizona site to support future expansion plans.　　Although TSMC’s U.S. fabs are more costly, capacity remains in strong demand, with previous reports indicating that customers had already reserved capacity at all four Arizona fabs, as noted by Economic Daily News. Institutional investors said that, for process technologies below 2nm, TSMC’s related capacity ratio between Taiwan and the U.S. is expected to reach roughly 7:3 by 2030.　　TSMC Reshapes Board Amid Global Expansion　　In addition, TSMC has also recently adjusted its board structure. According to Commercial Times, the company plans to revise its corporate charter by increasing the number of board seats from the current seven to ten directors to nine to twelve, with the proposal set to be discussed at the shareholders’ meeting on June 4.　　The move reflects TSMC’s response to the rapidly changing global business environment and is intended to provide greater flexibility in recruiting directors from diverse professional backgrounds, the report said. It also noted that, as TSMC rapidly expands overseas and continues increasing its U.S. investments, the board will need more members with expertise in international supply chains, geopolitics, and U.S. policy.

Key word：

TSMC

Release time：2026-05-07 13:22 reading：397 Continue reading>>

Trade news

Apple Reportedly Eyes Samsung, Intel U.S. Foundry for Core Chips Amid TSMC Constraints, Supply Diversification

　　Apple is reportedly weighing the possibility of having some of its core device chips manufactured by Samsung and Intel. According to Bloomberg, citing sources, the company has held preliminary discussions on using the two as alternative production partners for its main processors—potentially providing a second sourcing option alongside its longstanding supplier, TSMC.　　Sources say the company has held early-stage discussions with Intel about leveraging its foundry services, while Apple executives have also visited a Samsung facility under construction in Texas that is expected to produce advanced chips.　　That said, the report notes that neither effort has led to any orders so far. Engagements with both suppliers remain at a preliminary stage, as Apple continues to have reservations about adopting non-TSMC manufacturing technologies.　　One of the key drivers behind Apple’s potential shift is supply constraints at TSMC, according to Bloomberg. As the report notes, Apple executives addressed the issue during the company’s quarterly earnings call last week, indicating that limited chip availability for iPhone and Mac devices is currently weighing on growth.　　In early 2026, Tim Cook identified access to advanced-node manufacturing as the main bottleneck for Apple’s iPhone output, according to CNBC. He noted that production is constrained by limited capacity for the company’s A-series and M-series system-on-chip (SoC) chips, which are fabricated on TSMC’s 3nm process.　　In addition, it also aims to maintain at least two suppliers for key components, allowing Apple to strengthen its negotiating leverage on pricing while reducing the risk of supply disruptions, Bloomberg adds.　　Apple’s Reported Supplier Talks May Open Door for Intel Comeback, Samsung Gains　　Apple’s talks with both companies reportedly began before the most recent supply constraints emerged. As Bloomberg notes, collaborating with Intel could offer an added advantage, potentially strengthening Apple’s ties with the Donald Trump administration. As for Samsung, the report indicates that it has already been working on supplying more peripheral components for Apple’s devices, including power management parts.　　In an August 2025 press release, Apple also announced a partnership with Samsung to co-develop a new chip manufacturing technology at Samsung’s Austin fab. Citing industry sources, Business Korea adds that the chip Samsung is expected to produce will likely be used as an image sensor in future iPhones and other Apple products.　　Separately, industry momentum appears to be building around Intel’s foundry push. According to Commercial Times, major tech firms including Google and Apple are weighing a shift to Intel’s foundry. The report adds that Apple’s M-series chips are evaluating Intel’s 18A-P node.　　Apple’s potential shift could provide a boost to both Samsung and Intel. As the report notes, securing external customers for its foundry business is central to Intel’s turnaround strategy under CEO Lip-Bu Tan. Winning Apple as a client would mark a major milestone for Tan and could help draw in additional business. Samsung, meanwhile, would also stand to gain significantly from an endorsement by Apple.

Key word：

Apple

Release time：2026-05-06 14:44 reading：400 Continue reading>>

Trade news

NOVOSENSE Launches Next-Generation Isolated CAN Transceiver NSI1150, Supporting ±70V Bus Fault Protection and Higher Data Rates

　　NOVOSENSE today announced the launch of its new industrial-grade isolated CAN transceiver, the NSI1150 series. Built on NOVOSENSE's third-generation isolation technology, the device delivers ±70V bus fault protection and up to ±150kV/μs (typical) common-mode transient immunity (CMTI). Compared to the previous generation (NSI1050), the NSI1150 achieves a comprehensive improvement in reliability and noise immunity. It also integrates NOVOSENSE's proprietary CAN FD transceiver, supporting communication speeds of up to 5 Mbps.　　The NSI1150 is available in multiple package options, including SOW16, SOW8, SOP8, SOWW8, and DUB8, addressing diverse design requirements. It is well suited for high-voltage, high-noise, multi-node applications such as industrial automation and control, energy and power systems, as well as communications and servers.　　Reliability Upgrade for Harsh Environments　　The NSI1150 delivers industry-leading reliability and robustness, featuring a high CMTI of ±150kV/μs (typical) and ±70V bus fault protection, enabling it to effectively handle strong electromagnetic interference and ground potential differences in demanding environments.　　In addition, all pins support ±6kV HBM ESD protection and 10kV surge capability across the isolation barrier, ensuring stable communication even under extreme conditions. The device offers multiple isolation ratings—3 kVRMS, 5 kVRMS, and 7.5 kVRMS—to meet stringent safety requirements across various applications, reinforcing system protection in critical sectors such as industrial automation and energy infrastructure.　　Multiple Package Options for Flexible Design　　The NSI1150 is offered in five mainstream package options—SOW16, SOW8, SOP8, SOWW8, and DUB8—accommodating different space constraints and safety requirements. Among them, the newly introduced SOWW8 wide-body package provides up to 15 mm creepage distance, making it ideal for applications with strict creepage requirements, such as photovoltaic systems, EV charging stations, and industrial power supplies.　　This extended creepage distance simplifies safety certification processes and enables more flexible layout design for high power density systems. The diversified package portfolio further enhances design flexibility and accelerates time-to-market.　　"Isolation+" Portfolio Setting Industry Benchmark　　Leveraging its deep expertise and technological leadership in isolation, NOVOSENSE offers a comprehensive "Isolation+" portfolio, including digital isolators, isolated sensing, isolated interfaces, isolated power, and isolated drivers.　　NOVOSENSE is building a robust safety foundation for high-voltage systems with its full "Isolation+" ecosystem:　　"+" stands for enhanced safety: NOVOSENSE products deliver safety levels exceeding basic isolation standards, and build a more reliable system isolation safety boundary for customers' systems.　　"+" stands for full product ecosystem: With mature capacitive isolation technology IP as the cornerstone, expand into a complete product portfolio to provide one-stop isolation solutions.　　"+" stands for in-depth application empowerment: Meet the emerging needs of scenarios including electric vehicle high-voltage platforms, high-power photovoltaic-storage-charging systems, and high-integration, high-efficiency AI server power supplies, enabling system-level safety, reliability and efficiency.　　With its comprehensive "Isolation+" product strategy—anchored by core technology IP and a full ecosystem—NOVOSENSE continues to set the benchmark in isolation semiconductors, delivering one-stop isolation solutions to customers worldwide.　　Previous:

Key word：

NOVOSENSE

Release time：2026-04-24 10:58 reading：581 Continue reading>>

Trade news

Murata begins mass production of seven automotive MLCCs with world-leading capacitance for their rated voltage and size

　　Murata Manufacturing Co., Ltd has begun mass production of seven AEC-Q200-qualified multilayer ceramic capacitors (MLCCs) that achieve the world’s largest capacitance for a given rated voltage and size*, supporting stable operation of in-vehicle systems and greater design flexibility. Five parts in the GCM series are rated at 2.5-4 Vdc, targeting IC peripheral circuits in advanced driver assistance systems (ADAS) and autonomous driving (AD) applications. The remaining two MLCCs are rated at 25 Vdc for in-vehicle power line applications.　　In recent years, as ADAS and AD technologies advance, the number and performance level of systems installed in vehicles have continued to increase. As a result, demand for higher capacitance low-voltage MLCCs used around ICs has grown to ensure stable operation. In addition, as the number of MLCCs mounted on PCBs increases, space constraints become the critical, limiting factor in design. At the same time, for medium-rated voltage MLCCs used in automotive power lines, there is a rising demand for both miniaturization and higher capacitance to improve power and mounting density. These needs are particularly pronounced in ADAS and AD systems, where IC peripheral circuits and power lines are both subject to significant voltage fluctuations, requiring further increases in capacitance and reductions in component size.　　Leveraging its proprietary ceramic materials along with particle refinement and uniformity technologies, Murata introduces seven automotive MLCCs that achieve the world’s largest capacitance by rated voltage and size.　　For low-rated voltage MLCCs, Murata has expanded its lineup of products with a capacitance of 100 µF or higher, achieving 100 µF in the 1206-inch (3.2 mm × 1.6 mm) size, which was previously available only in the larger 1210-inch (3.2 mm × 2.5 mm) size. This reduces PCB mounting area by approximately 36%. In addition, in the smallest automotive MLCC size of 0201-inch (0.6 mm × 0.3 mm), capacitance has been increased from the typical 1-2.2 µF. For medium-rated voltage MLCCs, Murata has achieved a capacitance of 1 µF in the 0402-inch (1.0 mm × 0.5 mm) size, which was previously realized in the larger 0603-inch (1.6 mm × 0.8 mm), reducing PCB mounting area by approximately 61%.　　By combining this product lineup, Murata addresses a wide range of challenges in the automotive market, including higher capacitance requirements around ICs, severe PCB space constraints, and stabilization of power lines, thereby contributing to stable operation of entire systems and greater design flexibility. Furthermore, reducing the number of MLCCs required enables lower PCB material usage and reduced power consumption during manufacturing, helping to lessen the environmental impact.　　In the low-voltage lineup, the 2.5 Vdc rated GCM035D70E225ME02 is available in the 0201-inch size (0.6 mm × 0.3 mm), and offers a capacitance of 2.2 µF, achieving the world’s largest capacitance for its rated voltage and size class. The 1206-inch size (3.2 mm × 1.6 mm) GCM31CD70E107ME36 is rated at 2.5 Vdc and provides 100 µF, the world’s highest capacitance in its class. The GCM035D70G225MEC2 is rated at 4 Vdc, available in the 0201-inch size (0.6 mm × 0.3 mm), and delivers 2.2 µF, also the world’s highest capacitance for this category. The GCM31CD70G107ME36 is rated at 4 Vdc, available in the 1206-inch size (3.2 mm × 1.6 mm), and offers 100 µF, achieving the world’s highest capacitance for this rated voltage and size. The GCM32ED70G227MEC4 is rated at 4 Vdc, available in the 1210-inch size (3.2 mm × 2.5 mm), and provides 220 µF, the world’s largest capacitance in this class.　　The medium-rated voltage lineup has two part numbers designed for power line applications. The GCM155D71E105KE36 is rated at 25 Vdc, available in the 0402-inch size (1.0 mm × 0.5 mm), and offers 1 µF, achieving the world’s highest capacitance for this rated voltage and size. Also rated at 25 Vdc, the GCM31CC71E226ME36 is available in the 1206-inch size (3.2 mm × 1.6 mm), and provides 22 µF, also the world’s highest capacitance in its class.　　Murata has long focused on the development of automotive MLCCs and has delivered a wide range of products that demonstrate excellent performance across applications from IC peripheral circuits to powertrain and safety systems. Going forward, Murata will continue to contribute to higher performance and increased functionality of cars through ongoing product development that responds to evolving market needs.

Key word：

Murata

Release time：2026-04-24 10:39 reading：411 Continue reading>>

Trade news

ROHM Develops 5th Generation SiC MOSFETs with Approx. 30% Lower On-Resistance at High Temperatures

　　ROHM has developed the latest device of its EcoSiC™ series: the 5th Generation SiC MOSFETs optimized for high efficiency power applications. This technology is ideally suitable for automotive electric powertrain systems – such as traction inverters for electric vehicles (xEVs) – as well as power supplies for AI servers and industrial equipment such as data centers.　　In recent years, the rapid proliferation of generative AI and big data processing has accelerated the deployment of high-performance servers in the industrial equipment sector. The resulting surge in power density is placing a greater strain on power infrastructure, raising concerns about localized supply shortages. While smart grids that combine renewable energy sources (i.e., solar power) with existing power supply networks are emerging as a possible solution, minimizing losses during energy conversion and storage remains a key challenge.　　In the automotive sector, next-generation electric vehicles require extended cruising range and faster charging, creating demand for lower-loss inverters and higher performance onboard chargers (OBCs). Against this backdrop, the adoption of SiC devices capable of both low loss and high efficiency is increasing in high-power applications ranging from a few kilowatts to hundreds of kilowatts.　　As the first semiconductor company globally, ROHM was the first in the world to begin mass production of SiC MOSFETs in 2010, contributing to reducing energy losses by implementing SiC devices over a wide range of high-power applications, including offering an early lineup of products compliant with automotive reliability standards such as AEC-Q101. Furthermore, the 4th generation SiC MOSFETs, for which sample provision began in June 2020, have been adopted globally in automotive and industrial applications. They are available across a broad product portfolio, including both discrete devices and modules, supporting the rapid market adoption of SiC technology.　　The newly developed 5th Generation SiC MOSFETs achieve industry-leading low loss, driving the broader adoption of SiC technology. Through structural enhancements and manufacturing process optimization, ON resistance is reduced by approximately 30% during high temperature operation (Tj=175°C) compared to conventional 4th Generation products (under the same breakdown voltage and chip size conditions). This improvement contributes to making units smaller while increasing output power in high temperature applications such as traction inverters for xEVs.　　ROHM began supporting the bare dies business with 5th Generation SiC MOSFETs in 2025 and completed development in March 2026. Furthermore, starting from July 2026, ROHM will provide samples of discrete devices and modules incorporating 5th Generation SiC MOSFETs.　　Going forward, ROHM plans to expand its 5th Generation SiC MOSFET lineup with additional breakdown voltage and package options. ROHM will also continue to enhance its design tools and strengthen application support. By further promoting the implementation of SiC technology – now entering the mainstream phase – ROHM contributes to more efficient power utilization across a wide variety of high-power applications.　　Application ExamplesAutomotive Systems: xEV traction inverters, onboard chargers (OBCs), DC-DC converters, electric compressors　　Industrial Equipment: Power supplies for AI servers and data centers, PV inverters, ESS (Energy Storage Systems), UPS (Uninterruptible Power Supplies), eVTOL, AC servos　　EcoSiC™ BrandEcoSiC™ is a brand of devices that utilize silicon carbide, which is attracting attention in the power device field for performance that surpasses silicon. ROHM independently develops the core technologies needed to advance SiC devices completely in-house, from wafer fabrication and process development to packaging and quality control. At the same time, we have established a fully integrated production system that spans the entire manufacturing flow, solidifying our position as a leading SiC supplier.

Key word：

ROHM

Release time：2026-04-24 10:34 reading：454 Continue reading>>

model	brand	Quote
MC33074DR2G	onsemi
CDZVT2R20B	ROHM Semiconductor
TL431ACLPR	Texas Instruments
RB751G-40T2R	ROHM Semiconductor
BD71847AMWV-E2	ROHM Semiconductor

model	brand	To snap up
ESR03EZPJ151	ROHM Semiconductor
IPZ40N04S5L4R8ATMA1	Infineon Technologies
STM32F429IGT6	STMicroelectronics
BU33JA2MNVX-CTL	ROHM Semiconductor
BP3621	ROHM Semiconductor
TPS63050YFFR	Texas Instruments

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